Wolfspeed_20kW_LLC

The purpose of this evaluation hardware is to demonstrate the system performance of Cree’s 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs.

样机文件如下：