IGBT驱动参数-开通门极电阻、开通栅极电容

1 IGBT驱动门极电阻RG的变化对IGBT模块开通过程的影响

如图1、2、3所示，IGBT开通时，门极电阻增加将会带来以下影响：

开通延迟时间td

减小di/dt

减小dv/dt

增加了门极电压达到常规开通值的时间

减小了二极管反向恢复峰值电流Irr

开通损耗作为RG的函数对其的依赖性相对较高。可以从相关曲线图得到相同的结论。
Chart 5 summarizes the results as function of the gate resistor RG.

Max(C2):26.25,Max(C3):203A,Max(C4):383V

Figure 1: IGBT turn-on with RG=1.8Ω

Max(C2):20.00V,Max(C3):177A,Max(C4):379V

Figure 2: IGBT turn-on with RG=3.3Ω

Max(C2):15.00V,Max(C3):154A,Max(C4):379V

Figure 3: IGBT turn-on with RG=6.8Ω

Chart 5:td,Irr,dv/dt,and di/dv vs.RG(referenced to RG=1.8Ω）

2 IGBT驱动栅射电容CGE的变化对IGBT模块开通过程的影响        
       

开通延迟时间td

减小di/dt

减小dv/dt

减小总的震荡

减小了二极管反向恢复峰值电流Irr

Chart 6 summarizes the results as function of the gate-emitter capacitor CGE.The reference here is the measurement from Figure 4 Max(C2):24.58V,Max(C3):194A,Max(C4):379V

Figure 4: IGBT turn-on with RG=1.8Ω and CGE=10nF

Max(C2):15.00V,Max(C3):150A,Max(C4):383V

Figure 5: IGBT turn-on with RG=1.8Ω and CGE=56nF

Max(C2):11.67V, Max(C3):115A, Max(C4):379V

Figure 6: IGBT turn-on with RG=1.8Ω and CGE=100nF

Chart 6:td,Irr,dv/dt,and di/dv vs.CGE(referenced to RG=1.8Ω and no CGE applied)