开通损耗作为RG的函数对其的依赖性相对较高。可以从相关曲线图得到相同的结论。 Chart 5 summarizes the results as function of the gate resistor RG.
Max(C2):26.25,Max(C3):203A,Max(C4):383V
Figure 1: IGBT turn-on with RG=1.8Ω
Max(C2):20.00V,Max(C3):177A,Max(C4):379V
Figure 2: IGBT turn-on with RG=3.3Ω
Max(C2):15.00V,Max(C3):154A,Max(C4):379V
Figure 3: IGBT turn-on with RG=6.8Ω
Chart 5:td,Irr,dv/dt,and di/dv vs.RG(referenced to RG=1.8Ω）
2 IGBT驱动栅射电容CGE的变化对IGBT模块开通过程的影响
如图4、5、6所示，IGBT开通时，栅极-发射极电容增加将会带来以下影响：
开通延迟时间td
减小di/dt
减小dv/dt
减小总的震荡
减小了二极管反向恢复峰值电流Irr
Chart 6 summarizes the results as function of the gate-emitter capacitor CGE.The reference here is the measurement from Figure 4 Max(C2):24.58V,Max(C3):194A,Max(C4):379V
Figure 4: IGBT turn-on with RG=1.8Ω and CGE=10nF
Max(C2):15.00V,Max(C3):150A,Max(C4):383V
Figure 5: IGBT turn-on with RG=1.8Ω and CGE=56nF
Max(C2):11.67V, Max(C3):115A, Max(C4):379V
Figure 6: IGBT turn-on with RG=1.8Ω and CGE=100nF
Chart 6:td,Irr,dv/dt,and di/dv vs.CGE(referenced to RG=1.8Ω and no CGE applied)
