蜀道难
射频微系统SiP相控阵TR
- 2
- 30
他的服务
查看全部
仿真分析；付费答疑；其他服务
暂无成交
¥100起
- 蜀道难打扰了，借贵宝地打个广告啊[抱拳]【英雄帖召集令-急招】海思射频RFIC领域，研究或从事：半导体器件模型/工艺/版图/PDK等任一方向，大佬或萌新均可，有兴趣的可以推荐或自荐，联系**13541277984或直接将简历投至c_rainbow@126.com。base地：成都/上海/武汉，待遇从优，老少咸宜，童叟无欺[微笑] 再来一波啊[好的]
【英雄帖召集令-急招】
海思射频RFIC领域，研究或从事：
半导体器件模型/工艺/版图/PDK等任一方向，
大佬或萌新均可，有兴趣的可以推荐或自荐，
联系**13541277984
或直接将简历投至c_rainbow@126.com。
base地：成都/上海/武汉，
待遇从优，老少咸宜，童叟无欺，
欢迎您的加入～
- 蜀道难基于可调补偿线的L波段Doherty功率放大器设计 随着现代无线通信系统中3G和4G的标准化，移动通讯给基站及手机发射机提出更高的要求，即高的数据传送率和高效的数字调制方案。
宽带码分多址（Wideband Code Division Multiple Access, W-CDMA）和正交频分复用（Orthogonal Frequency Division Multiplexing, OFDM）技术的调制方式使信号在宽的动态范围内有很快的包络变化，导致高的峰均功率比（Peak-to-Average-Power Ratio, PAPR），从而需要具有高线性度的功率放大器（Power Amplifier, PA）。
作为移动通信系统发射机中的一个重要组成部分，PA的效率和线性度是一对矛盾，很难被同时提高，且直接决定通信的质量。
然而，Doherty PA在具有高效率的基础上实现了线性度的提高。
同时，它的结构简单，所以被广泛用在基站设计中。
本文提出具有可调补偿线的Doherty PA结构，并采用恩智浦半导体公司（NXP Semiconductors）AFT20P140-4WN型号的横向扩散金属氧化物半导体（Laterally-Diffused Metal-oxide Semiconductor, LDMOS）场效应晶体管（Field Effect Transistor, FET）。
仿真设计结果实现较高的效率、线性度及带宽等指标。
由于在经典Doherty PA上只添加可调补偿线，所以不仅电路结构简单，而且有效阻止辅助PA的输入输出匹配电路的幅度相位失真及输出端口的功率泄漏。
因此，基于可调补偿线的L波段Doherty PA的设计是个具有相当大使用前景的方案。
- 蜀道难
- 蜀道难Design of a X-Band 2×2 Phased-Array Transceiver Module Using Chiplet Method Abstract—radio frequency (RF) microsystem, which uses advanced heterogeneous integration (hetero-structure and hetero-material integration) package, has been widely attracted. In order to acquire more efficient design of complex RF microsystem, the method of chiplet based on accurate chip model (Intellectual Property, IP) is studied in this paper. Four RF chips are modeled and applied to design a X-band phased array T/R module. Compared with traditional design, the modified method can improve simulation accuracy of module.
Keywords—Chiplet, RF IP, behavior model, RF microsystem
- 蜀道难Design of a X-Band 2×2 Phased-Array Transceiver Module Using Chiplet Method Abstract—radio frequency (RF) microsystem, which uses advanced heterogeneous integration (hetero-structure and hetero-material integration) package, has been widely attracted. In order to acquire more efficient design of complex RF microsystem, the method of chiplet based on accurate chip model (Intellectual Property, IP) is studied in this paper. Four RF chips are modeled and applied to design a X-band phased array T/R module. Compared with traditional design, the modified method can improve simulation accuracy of module.
Keywords—Chiplet, RF IP, behavior model, RF microsystem - 蜀道难Design of a X-Band 2×2 Phased-Array Transceiver Module Using Chiplet Method Abstract—radio frequency (RF) microsystem, which uses advanced heterogeneous integration (hetero-structure and hetero-material integration) package, has been widely attracted. In order to acquire more efficient design of complex RF microsystem, the method of chiplet based on accurate chip model (Intellectual Property, IP) is studied in this paper. Four RF chips are modeled and applied to design a X-band phased array T/R module. Compared with traditional design, the modified method can improve simulation accuracy of module.
Keywords—Chiplet, RF IP, behavior model, RF microsystem
